N Novel Structure of AlGaN/GaN High Electron Mobility Transistor with Groove Dual-Field Plate

Abstract

The novel structure of the AlGaN/GaN high electron mobility transistor (HEMT) with a groove double field-plate is proposed in this paper, which resolves the issue of the current collapse caused by the high electric field at the gate edge of conventional AlGaN/GaN HEMT. The current transport mechanism of the novel device and its effectiveness to suppress current collapse are studied. Based on the introduction of the groove dual-field plate, the depletion region of the novel device is extended. The electric field peak at the gate edge is reduced and the distribution of the electric field is more uniform. As a result, the new structure can improve the current collapse without significantly reducing the drain current. Compared with the conventional AlGaN/GaN HEMT, the suppression effect of the new device on the current collapse effect is increased by 94.1% when L_fp1 = 0.3 μm and L_fp2 = 0.7 μm.